Postdoc and PhD positions — Next Generation Computing Elements (Oxide/Nitride-based Resistive Switching Memory Devices for MCU and AI Applications), Max Planck Institute for Microstructure Physics, Halle
Semi-GovernmentVisa sponsorship unknown⏰ Deadline: 15 Nov 2026
Last checked on 19 October 2026 · The official source is final — check the official page for the latest details.
| Authority / Company | Max Planck Institute for Microstructure Physics |
|---|---|
| Job title | Postdoc and PhD positions — Next Generation Computing Elements (Oxide/Nitride-based Resistive Switching Memory Devices for MCU and AI Applications), Max Planck Institute for Microstructure Physics, Halle |
| Vacancies | Not stated |
| Salary | 65% (PhD), 100% (Postdoc) of pay group EG13 TVöD-Bund |
| Eligibility | For PhD positions: an MSc degree in physics, nanoscience, electrical engineering, computer science, or a related field, including a final thesis project. For postdoc positions: a PhD degree in physics, nanoscience, electrical engineering, computer science, or a related field with a proven track record. Demonstrated excellence in research and coursework, experience in device fabrication, nano-lithography, electrical characterization, programming (Python, LabVIEW), circuit development, resistive switching memory or neuromorphic computing, and strong English communication skills are required. The positions are fully funded; researchers will work in a team of about 10 on nanoscale device architectures and electrical characterization of oxide- and nitride-based resistive switching devices for microcontroller units (MCUs) and AI processors. |
| Application deadline | 15 November 2026 |
| Job location | Germany |
| Official source | Max Planck Institute for Microstructure Physics — Job Offer |
How to apply
Apply through the institute's application portal (mpi-hallempg.softgarden.io) by 15 November 2026, submitting a CV, motivation letter, research statement, and two reference letters. Start date is as soon as possible.
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